savantic semiconductor product specification silicon npn power transistors 2SD1667 d escription with to-220f package complement to type 2sb1134 low collector saturation voltage applications relay drivers,high-speed inverters,and other general high-current switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions max unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 50 v v ebo emitter-base voltage open collector 6 v i c collector current 5 a i cm collector current-peak 9 a t a =25 2 p c collector dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1667 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma ;r be = 9 50 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 60 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 6 v v cesat collector-emitter saturation voltage i c =3a; i b =0.3a 0.4 v i cbo collector cut-off current v cb =40v; i e =0 100 a i ebo emitter cut-off current v eb =4v; i c =0 100 a h fe-1 dc current gain i c =1a ; v ce =2v 70 280 h fe-2 dc current gain i c =3a ; v ce =2v 30 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 100 pf f t transition frequency i c =1a ; v ce =5v 30 mhz switching times t on turn-on time 0.1 s t s storage time 1.4 s t f fall time i c =2.0a; i b1 =-i b2 =0.2a v cc =20v;r=10 c 0.2 s h fe-1 classifications q r s 70-140 100-200 140-280
savantic semiconductor product specification 3 silicon npn power transistors 2SD1667 package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon npn power transistors 2SD1667
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